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description the a139x family of linear hall effect sensor integrated circuits (ics) provide a voltage output that is directly proportional to an applied magnetic field. before amplification, the sensitivity of typical hall effect ics (measured in mv/g) is directly proportional to the current flowing through the hall effect transducer element inside the ics. in many applications, it is difficult to achieve sufficient sensitivity levels with a hall effect sensor ic without consuming more than 3 ma of current. the a139x minimize current consumption to less than 25 a through the addition of a user-selectable sleep mode. this makes these devices perfect for battery-operated applications such as: cellular phones, digital cameras, and portable tools. end users can control the current consumption of the a139x by applying a logic level signal to the s l e e p pin. the outputs of the devices are not valid (high-impedance mode) during sleep mode. the high-impedance output feature allows the connection of multiple a139x hall effect devices to a single a-to-d converter input. the quiescent output voltage of these devices is 50 % nominal of the ratiometric supply reference voltage applied to the vref pin of the device. the output voltage of the device is not ratiometric with respect to the supply pin. 1391-ds, rev. 2 features and benefits ? high-impedance output during sleep mode ? compatible with 2.5 to 3.5 v power supplies ? 10 mw power consumption in the active mode ? miniature mlp/dfn package ? ratiometric output scales with the ratiometric supply reference voltage (vref pin) ? temperature-stable quiescent output voltage and sensitivity ? wide ambient temperature range: ?20c to 85c ? esd protection greater than 3 kv ? solid-state reliability ? preset sensitivity and offset at final test micro power 3 v linear hall effect sensors withtri-state output and user-selectable sleep mode continued on the next page? package: 6 pin mlp/dfn (suffix eh) functional block diagram approximate scale A1391, a1392, a1393, and a1395 amp out vcc out gnd filter dynamic offset cancellation gain offset hall element regulator programming logic circuit reference current to all subcircuits r ratio / 2 r ratio / 2 vref sleep
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 2 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com terminal list table pin name function 1 vcc supply 2 out output 3 gnd ground 4 gnd ground 5 s l e e p toggle sleep mode 6 vref supply for ratiometric reference despite the low power consumption of the circuitry in the a139x, the features required to produce a highly-accurate linear hall effect ic have not been compromised. each bicmos monolithic circuit integrates a hall element, improved temperature-compensating circuitry to reduce the intrinsic sensitivity drift of the hall element, a small-signal high-gain amplifier, and proprietary dynamic offset cancellation circuits. end of line, post-packaging, factory programming allows precise control of device sensitivity and offset. these devices are available in a small 2.0 3.0 mm, 0.75 mm nominal height microleaded package (mlp/dfn). it is pb (lead) free, with 100% matte tin leadframe plating. absolute maximum ratings* supply voltage v cc 8v reverse-supply voltage v rcc ?0.1 v ratiometric supply reference voltage v ref 7v reverse-ratiometric supply reference voltage v rref ?0.1 v logic supply voltage v s l e e p (v cc > 2.5 v) 32 v reverse-logic supply voltage v r s l e e p ?0.1 v output voltage v out v cc + 0.1 v reverse-output voltage v rout ?0.1 v operating ambient temperature t a range s ?20 to 85 oc junction temperature t j (max) 165 oc storagetemperature t stg ?65 to 170 oc *all ratings with reference to ground selection guide part number sensitivity (mv / g, typ.) packing A1391sehlt-t 1.25 7-in. reel, 3000 pieces/reel a1392sehlt-t 2.50 7-in. reel, 3000 pieces/reel a1393sehlt-t 5 7-in. reel, 3000 pieces/reel a1395sehlt-t 10 7-in. reel, 3000 pieces/reel 6 5 1 2 34 vcc out gnd vref gnd sleep description (continued) pin-out diagram
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 3 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com device characteristics tables electrical characteristics valid through full operating ambient temperature range, unless otherwise noted characteristic symbol test conditions min. typ. 1 max. units supply voltage v cc 2.5 ? 3.5 v nominal supply voltage v ccn ? 3.0 ? v supply zener clamp voltage v ccz i cc = 7 ma, t a = 25c 6 8.3 ? v ratiometric reference voltage 2 v ref 2.5 ? v cc v ratiometric reference zener clamp voltage v refz i vref = 3 ma, t a = 25c 6 8.3 ? v s l e e p input voltage ?0.1 ? v cc + 0.5 v s l e e p input threshold v inh for active mode ? 0.45 v cc ?v v inl for sleep mode ? 0.20 v cc ?v ratiometric reference input resistance r ref v sleep > v inh , v cc = v ccn, t a = 25c 250 ? ? k v sleep < v inl, v cc = v ccn, t a = 25c ?5 ?m chopper stabilization chopping frequency f c v cc = v ccn , t a = 25c ? 200 ? khz s l e e p input current i sleep v sleep = 3 v, v cc = v ccn ?1 ? a supply current 3 i cc v sleep < v inl, v cc = v ccn, t a = 25c ? 0.025 ? ma v sleep > v inh , v cc = v ccn, t a = 25c ? 3.2 ? ma quiescent output power supply rejection 4 psr voq f ac < 1 khz ? ?60 ? db 1 typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as t a = 25c. performance may vary for individual units, within the specified maximum and minimum limits. 2 voltage applied to the vref pin. note that the v ref voltage must be less than or equal to v cc . degradation in device accuracy will occur with applied voltages of less than 2.5 v. 3 if the vref pin is tied to the vcc pin, the supply current would be i cc + v ref / r ref 4 f ac is any ac component frequency that exists on the supply line.
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 4 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com output characteristics valid through full operating ambient temperature range, unless otherwise noted characteristic symbol test conditions min. typ. 1 max. units output voltage saturation limits 2 v outh b = x , v cc = v ccn , v ref v cc ?v ref ? 0.1 ? v v outl b = ? x , v cc = v ccn , v ref v cc ? 0.1 ? v maximum voltage applied to output v outmax v sleep < v inl ??v cc + 0.1 v sensitivity 3 sens A1391 t a = 25c, v cc = v ref = v ccn ? 1.25 ? mv/g a1392 t a = 25c, v cc = v ref = v ccn ? 2.50 ? mv/g a1393 t a = 25c, v cc = v ref = v ccn ? 5 ? mv/g a1395 t a = 25c, v cc = v ref = v ccn ? 10 ? mv/g quiescent output v outq t a = 25c, b = 0 g ? 0.500 v ref ?v output resistance 4 r out f out = 1 khz, v sleep > v inh , active mode ? 20 ? f out = 1 khz, v sleep < v inl , sleep mode ? 4m ? output load resistance r l output to ground 15 ? ? k output load capacitance c l output to ground ? ? 10 nf output bandwidth bw ?3 db point, v out = 1 v pp sinusoidal, v cc = v ccn ? 10 ? khz noise 5,6 v n 1391 c bypass = 0.1 f, bw externallpf = 2 khz ? 6 12 mv pp c bypass = 0.1 f, no load ? ? 20 mv pp 1392 c bypass = 0.1 f, no load ? ? 40 mv pp 1393 c bypass = 0.1 f, bw externallpf = 2 khz ?12 24mv pp c bypass = 0.1 f, no load ? ? 40 mv pp 1395 c bypass = 0.1 f, no load ? ? 80 mv pp 1 typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as t a = 25c. performance may vary for individual units, within the specified maximum and minimum limits. 2 this test requires positive and negative magnetic fields sufficient to swing the output driver between fully off and saturated (on), respectively. the value of vector x is not intended to indicate a range of linear operation. 3 for v ref values other than v ref = v ccn , the sensitivity can be derived from the following equation: 0.416 v ref . 4 f out is the output signal frequency 5 noise specification includes digital and analog noise. 5 values for bw externallpf do not include any noise resulting from noise on the externally-supplied vref voltage.
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 5 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com output timing characteristics 1 t a = 25c characteristic symbol test conditions min. typ. 2 max. units power-on time 3 t pon ?4060 s power-off time 4 t poff ?1? s 1 see figure 1 for explicit timing delays. 2 typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as t a = 25c. performance may vary for individual units, within the specified maximum and minimum limits. 3 power-on time is the elapsed time after the voltage on the s l e e p pin exceeds the active mode threshold voltage,v inh , until the time the device output reaches 90% of its value. when the device output is loaded with the maximum capacitance of 10 nf, the power-on time range is gu aranteed for input s l e e p pin frequencies less than 10 hz. 4 power-off time is the duration of time between when the signal on the s l e e p pin switches from high to low and when i cc drops to under 100 a. during this time period, the output goes into the high impedance state. magnetic characteristics t a = 25c characteristic symbol test conditions min. typ.* max. units ratiometry v outq( v) ? 100 ? % ratiometry sens ( v) ? 100 ? % positive linearity lin+ ? 100 ? % negative linearity lin ? ? 100 ? % symmetry sym ? 100 ? % *typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as t a = 25c. performance may vary for individual units, within the specified maximum and minimum limits.
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 6 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com sleep mode active mode -20 -5 10 25 40 55 70 85 supply current versus ambient temperature a139x, v cc = v ref = 3 v -20 -5 10 25 40 55 70 85 t a (c) i cc (ma) i ref (a) i sleep (a) ratiometric reference input current versus ambient temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 7 3 9 11 13 15 17 19 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t a (c) t a (c) sleep input current versus ambient temperature a139x, v cc = v ref = v sleep = 3 v a139x, v cc = v ref = v sleep = 3 v -20 -5 10 25 40 55 70 85 electrical characteristic data
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 7 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com (a139x) 99.0 99.2 99.4 99.6 99.8 100.0 100.2 100.4 100.6 100.8 101.0 -20 -5 10 25 40 55 70 85 t a (c) average ratiometry, voq (%) 2.5 to 3 v 3.5 to 3 v (A1391) 97.5 98.0 98.5 99.0 99.5 100.0 100.5 101.0 101.5 102.0 -20 -5 10 25 40 55 70 85 t a (c) average ratiometry, sens (%) 2.5 to 3 v 3.5 to 3 v (a1392) 97.5 98.0 98.5 99.0 99.5 100.0 100.5 101.0 101.5 102.0 -20 -5 10 25 40 55 70 85 t a (c) average ratiometry, sens (%) 2.5 to 3 v 3.5 to 3 v average ratiometry, v outq , versus ambient temperture average ratiometry, sens, versus ambient temperture average ratiometry, sens, versus ambient temperture magnetic characteristic data average symmetry, vcc=vref=vsleep=3v (a139x) 97.5 98.0 98.5 99.0 99.5 100.0 100.5 101.0 101.5 102.0 -20 -5 10 25 40 55 70 85 t a (c) average symetry (%) average linearity (a139x) 97.0 97.5 98.0 98.5 99.0 99.5 100.0 100.5 101.0 101.5 102.0 -20 -5 10 25 40 55 70 85 t a (c) average linearity (%) linearity - , v cc =3.5v linearity +, v cc =3.5v linearity +, v cc =2.5v linearity -, v cc = 2.5v
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 8 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com thermal characteristics may require derating at maximum conditions, see application information characteristic symbol test conditions min. units package thermal resistance r ja 1-layer pcb with copper limited to solder pads 221 oc/w 2-layer pcb with 0.6 in. 2 of copper area each side, connected by thermal vias 70 oc/w 4-layer pcb based on jedec standard 50 oc/w 0 500 1000 1500 2000 2500 3000 3500 4000 4500 20 40 60 80 100 120 140 160 180 temperature (c) power dissipation, p d (m w) power dissipation versus ambient temperature (r ja =70oc/ w) 2-layer pcb (r ja =50oc /w) 4-layer pcb (r ja =2 21 oc/ w ) 1-layer p cb
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 9 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com characteristics definitions ratiometric. the a139x devices feature ratiometric output. the quiescent voltage output and sensitivity are proportional to the ratiometric supply reference voltage. the percent ratiometric change in the quiescent voltage output is defined as: v ref 3 v v outq(v ref ) v outq(3v) v outq( v) = 100 % (1) and the percent ratiometric change in sensitivity is defined as: v ref 3 v = 100 % sens ( v ) sens (v ref ) sens ( 3 v ) (2) linearity and symmetry. the on-chip output stage is designed to provide a linear output with maximum supply voltage of v ccn . although application of very high magnetic fields will not damage these devices, it will force the output into a non-lin- ear region. linearity in percent is measured and defined as ? = 100 % lin+ v out(+b) 2( v out(+b / 2) ? v outq ) v outq (3) ? = 100 % lin? v out(?b) 2( v out(?b / 2) ? v outq ) v outq (4) and output symmetry as ? = 100 % sym v out(+b) v outq ? v out(?b) v outq (5)
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 10 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com device low-power functionality a139x are low-power hall effect sensor ics that are perfect for power sensitive customer applications. the current consumption of these devices is typically 3.2 ma, while the device is in the active mode, and less than 25 a when the device is in the sleep mode. toggling the logic level signal connected to the s l e e p pin drives the device into either the active mode or the sleep mode. a logic low sleep signal drives the device into the sleep mode, while a logic high sleep signal drives the device into the active mode. in the case in which the vref pin is powered before the vcc pin, the device will not operate within the specified limits until the supply voltage is equal to the reference voltage. when the device is switched from the sleep mode to the active mode, a time defined by t pon must elapse before the output of the device is valid. the device output transitions into the high impedance state approximately t poff seconds after a logic low signal is applied to the s l e e p pin (see figure 1). if possible, it is recommended to power-up the device in the sleep mode. however, if the application requires that the device be powered on in the active mode, then a 10 k resistor in series with the s l e e p pin is recommended. this resistor will limit the current that flows into the s l e e p pin if certain semiconductor junctions become forward biased before the ramp up of the volt- age on the vcc pin. note that this current limiting resistor is not required if the user connects the s l e e p pin directly to the vcc pin. the same precautions are advised if the device supply is powered-off while power is still applied to the s l e e p pin. b field v cc v sleep i cc v out t pon t pon +b 0 ?b t poff t poff high impedance high impedance high impedance figure 1. a139x timing diagram
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 11 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com device supply ratiometry application circuit figures 2 and 3 present applications where the vcc pin is con- nected together with the vref pin of the a139x. both of these pins are connected to the battery, vbat2. in this case, the device output will be ratiometric with respect to the battery voltage. the only difference between these two applications is that the s l e e p pin in figure 2 is connected to the vbat2 potential, so the device is always in the active mode. in figure 3, the s l e e p pin is toggled by the microprocessor; therefore, the device is selectively and periodically toggled between active mode and sleep mode. in both figures, the device output is connected to the input of an a-to-d converter. in this configuration, the converter reference voltage is vbat1. it is strongly recommended that an external bypass capacitor be connected, in close proximity to the a139x device, between the vcc and gnd pins of the device to reduce both external noise and noise generated by the chopper-stabilization circuits inside of the a139x. vbat1 c bypass vcc out gnd gnd sleep vref vbat2 a139x micro- processor supply pin i/o i/o figure 2. application circuit showing sleep mode disabled and output ratiometirc to the a139x supply. figure 3. application circuit showing microprocessor-controlled sleep mode and output ratiome- tirc to the a139x supply. vbat1 vbat2 processor supply pin i/o i/o c bypass vcc out gnd gnd sleep vref micro- a139x
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 12 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com application circuit with user-configurable ratiometry c filter c bypass vbat2 micro- processor supply pin i/o i/o vbat 1 vcc out gnd gnd sleep vref a139x vbat2 micro- processor supply pin i/o i/o vbat1 c filter c bypass vcc out gnd gnd sleep vref a139x figure 4. application circuit showing ratiometry of v ref . sleep mode is disabled and the vref pin is tied to the microprocessor supply. figure 5. application circuit showing device reference pin, vref, tied to microprocessor supply. the device sleep mode also is controlled by the microprocessor. in figures 4 and 5, the microprocessor supply voltage determines the ratiometric performance of the a139x output signal. as in the circuits shown in figures 2 and 3, the device is powered by the vbat2 supply, but in this case, ratiometry is determined by the microprocessor supply, vbat1. the s l e e p pin is triggered by the output logic signal from the microprocessor in figure 5, while in figure 4, the s l e e p pin is connected to the device power supply pin. therefore, the device as configured in figure 4 is constantly in active mode, while the device as confiugred in figure 5 can be periodically toggled between the active and sleep modes. the capacitor c filter is optional, and can be used to prevent pos- sible noise transients from the microprocessor supply reaching the device reference pin, vref. it is strongly recommended that an external bypass capacitor be connected, in close proximity to the a139x device, between the vcc and gnd pins of the device to reduce both external noise and noise generated by the chopper-stabilization circuits inside of the a139x.
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 13 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com summary of single-device application circuits application circuit device pin connections device output vref pin (ratiometric reference supply) s l e e p pin vbat1 c bypass vcc out gnd gnd sleep vref vbat2 a139x micro- processor supply pin i/o i/o connected to a139x device supply, vcc connected to a139x device supply, vcc ratiometric to device supply (vcc), and always valid vbat1 vbat2 processor supply pin i/o i/o c bypass vcc out gnd gnd sleep vref micro- a139x connected to a139x device supply, vcc controlled by microprocessor ratiometric to device supply (vcc), and controlled by the microprocessor c filter c bypass vbat2 micro- processor supply pin i/o i/o vbat 1 vcc out gnd gnd sleep vref a139x connected to microprocessor supply connected to a139x device supply, vcc ratiometric to micro- processor supply, and always valid vbat2 micro- processor supply pin i/o i/o vbat1 c filter c bypass vcc out gnd gnd sleep vref a139x connected to microprocessor supply controlled by microprocessor ratiometric to micro- processor supply, and controlled by the microprocessor
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 14 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com application circuit with multiple hall devices and a single a-to-d converter multiple a139x devices can be connected to a single micro- processor or a-to-d converter input. in this case, a single device is periodically triggered and put into active mode by the microprocessor. while one a139x device is in active mode, all of the other a139x devices must remain in sleep mode. while these devices are in sleep mode, their outputs are in a high-impedance state. in this circuit configuration, the microprocessor reads the output of one device at a time, according to microprocessor input to the s l e e p pins. when multiple device outputs are connected to the same microprocessor input, pulse timing from the microproces- sor (for example, lines a1 through a4 in figure 6) must be configured to prevent more than one device from being in the awake mode at any given time of the application. a device output structure can be damaged when its output voltage is forced above the device supply voltage by more than 0.1 v. figure 6. application circuit showing multiple a139x devices, controlled by a single microprocessor. c bypass vcc out gnd gnd sleep vref vbat2 a139x vbat2 vbat2 vbat2 a1 a2 a3 a4 supply pin microprocessor i/o vbat1 a1 a2 a3 a4 c filter c bypass vcc out gnd gnd sleep vref A1391x c bypass vcc out gnd gnd sleep vref a139x c bypass vcc out gnd gnd sleep vref a139x
micro power 3 v linear hall effect sensors with tri-state output and user selectable sleep mode A1391, a1392, a1393, and a1395 15 allegro microsystems, inc. 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 0.30 0.18 .012 .007 0.80 0.70 .031 .028 0.05 0.00 .002 .000 2.15 1.85 .085 .073 3.15 2.85 .124 .112 1 nom .0394 1.5 nom .0591 0.20 ref .008 a b c seating plane c 0.08 [.003] 5x 0.50 .020 6x 0.10 [.004] m c a b 0.05 [.002] m c 0.225 ref .009 6 2 1 a a terminal #1 mark area b exposed thermal pad hall element (not to scale); u.s. customary dimensions controlling dimensions preliminary only, not for tooling use (reference jedec mo-229 wced) dimensions in millimeters u.s. customary dimensions (in.) in brackets, for reference only dimensions exclusive of mold flash, gate burrs, and dambar protrusions exact case and lead configuration at supplier discretion within limits shown 3.70 .146 1.25 .049 0.65 0.45 .026 .018 1.042 nom .0410 1.00 .039 0.50 .020 0.95 c c c c .037 0.25 .010 0.25 .010 0.30 .012 1 1 6 6 b e d e reference pad layout (reference ipc7351); adjust as necessary to meet application process requirements; when mounting on a multilayer pcb, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference eia/jedec standard jesd51-5) 2 1.224 nom .0482 d active area depth, 0.34 [.013] package eh, 6-pin mlp/dfn the products described herein are manufactured under one or more of the following u.s. patents: 5,045,920; 5,264,783; 5,442,283 ; 5,389,889; 5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending. allegro microsystems, inc. reserves the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be required to permit improvements in the per for mance, reliability, or manufacturability of its products. before placing an order, the user is cau tioned to verify that the information being relied upon is current. allegro products are not authorized for use as critical components in life-support devices or sys tems without express written approval. the in for ma tion in clud ed herein is believed to be ac cu rate and reliable. how ev er, allegro microsystems, inc. assumes no re spon si bil i ty for its use; nor for any in fringe ment of patents or other rights of third parties which may result from its use. copyright ? 2005-2006 allegro microsystems, inc.

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